FDMD8560L
MOSFET 2N-CH 60V 22A 8PWR 5X6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi's FDMD8560L is a 60V, 2N-channel PowerTrench® MOSFET array, specifically two N-channel devices configured as a half-bridge. This component offers a continuous drain current (Id) of 22A and a pulsed drain current of 93A at 25°C. The low on-resistance (Rds On) is 3.2mOhm at 22A and 10V, with a maximum power dissipation of 2.2W. Key parameters include a gate charge (Qg) of 128nC at 10V and input capacitance (Ciss) of 11130pF at 30V. The device features a Vgs(th) of 3V at 250µA. Packaged in an 8-Power 5x6 (8-PowerWDFN) for surface mounting, it operates within a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in power management applications, including DC-DC converters and motor control circuits. It is supplied on tape and reel.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 22A, 93A |
| Input Capacitance (Ciss) (Max) @ Vds | 11130pF @ 30V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 22A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 128nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-Power 5x6 |
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