FDMD8530
MOSFET 2N-CH 30V 35A POWER56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi's PowerTrench® FDMD8530 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 30V drain-source voltage rating and supports a continuous drain current of 35A at 25°C. The device exhibits a low on-resistance of 1.25mOhm at 35A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 2.2W and a gate charge of 149nC at 10V, it is suitable for demanding power management tasks. The input capacitance (Ciss) is specified at 10395pF maximum at 15V Vds. The FDMD8530 is housed in an 8-PowerWDFN package (Power56) for surface mounting and operates across a wide temperature range of -55°C to 150°C. This MOSFET array finds application in automotive, industrial, and consumer electronics power systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 35A |
| Input Capacitance (Ciss) (Max) @ Vds | 10395pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.25mOhm @ 35A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 149nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Power56 |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
