FDMD85100
MOSFET 2N-CH 100V 10.4A POWER56Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMD85100 is a PowerTrench® MOSFET array featuring two N-channel devices in a half-bridge configuration. This component is rated for a Drain to Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 10.4A at 25°C. With a low Rds(On) of 9.9mOhm at 10.4A and 10V Vgs, it facilitates efficient power conversion. Key parameters include a maximum power dissipation of 2.2W, Gate Charge (Qg) of 31nC (max) at 10V, and Input Capacitance (Ciss) of 2230pF (max) at 50V. The device operates within a temperature range of -55°C to 150°C. Packaged in an 8-PowerWDFN (Power56) format for surface mounting and supplied on tape and reel, the FDMD85100 is suitable for applications in power management, industrial control, and automotive systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.2W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 10.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 2230pF @ 50V |
| Rds On (Max) @ Id, Vgs | 9.9mOhm @ 10.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | Power56 |
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