FDMD8440L
MOSFET 2N-CH 40V 21A PWR 3.3X5Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDMD8440L is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 21A at 25°C ambient and 87A at 25°C case. With a low on-resistance (Rds On) of 2.6mOhm at 21A and 10V, it minimizes conduction losses. The maximum power dissipation is 2.1W ambient and 33W case. Key electrical characteristics include a gate charge (Qg) of 62nC at 10V and input capacitance (Ciss) of 4150pF at 20V. The FDMD8440L is housed in an 8-PowerWDFN package, suitable for surface mounting, and operates within a temperature range of -55°C to 150°C. This MOSFET array is utilized in industries such as automotive and industrial power systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W (Ta), 33W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 87A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 4150pF @ 20V |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 21A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Power 3.3x5 |
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