FDMD84100
MOSFET 2N-CH 100V 7A POWER 3.3X5Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDMD84100 is a dual N-channel MOSFET array designed for high-efficiency power conversion applications. Featuring a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 7A at 25°C, this component offers a low Rds(On) of 20mOhm at 7A, 10V. The device is housed in an 8-PowerWDFN package, utilizing a Power 3.3x5 supplier device package for robust thermal management and a maximum power dissipation of 2.1W. Key electrical characteristics include a gate charge (Qg) of 16nC (max) at 10V and input capacitance (Ciss) of 980pF (max) at 50V. The FDMD84100 operates across a temperature range of -55°C to 150°C and is supplied on tape and reel for automated assembly. This MOSFET array is commonly found in automotive and industrial power management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Source |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 50V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | Power 3.3x5 |
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