FDMD8240LET40
MOSFET 2N-CH 40V 24A 12POWERManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi's FDMD8240LET40 is a PowerTrench® series dual N-channel MOSFET array. This component features a 40V drain-source voltage and a continuous drain current of 24A at 25°C, with a maximum power dissipation of 50W. The Rds On is specified at 2.6 mOhm at 23A and 10V Vgs. Gate charge (Qg) is a maximum of 56nC at 10V, and input capacitance (Ciss) is a maximum of 4230pF at 20V. The MOSFET array utilizes Metal Oxide technology and is housed in a 12-PowerWDFN package, suitable for surface mounting. It operates across a temperature range of -55°C to 175°C. This device is commonly found in power management applications across various industries, including automotive and industrial automation. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 50W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 24A |
| Input Capacitance (Ciss) (Max) @ Vds | 4230pF @ 20V |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 23A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 12-Power3.3x5 |
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