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FDMD8240L

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FDMD8240L

MOSFET 2N-CH 40V 23A 12POWER

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi PowerTrench® FDMD8240L is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a Drain to Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 23A at 25°C. The Rds(On) is specified at a maximum of 2.6mOhm at 23A and 10V Vgs, ensuring low conduction losses. Key electrical characteristics include an input capacitance (Ciss) of 4230pF (Max) at 20V and a gate charge (Qg) of 56nC (Max) at 10V, facilitating fast switching performance. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.1W. The FDMD8240L is housed in a 12-Power3.3x5 (12-PowerWDFN) package, suitable for surface mounting. Its advanced PowerTrench® technology contributes to its superior performance and reliability. This MOSFET array is commonly utilized in automotive, industrial, and computing sectors requiring robust power conversion solutions. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case12-PowerWDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.1W
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C23A
Input Capacitance (Ciss) (Max) @ Vds4230pF @ 20V
Rds On (Max) @ Id, Vgs2.6mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package12-Power3.3x5

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