FDMD82100L
MOSFET 2N-CH 100V 7A 12POWERManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMD82100L is a dual N-channel PowerTrench® MOSFET array designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 7A at 25°C. With a low Rds(On) of 19.5mOhm at 7A and 10V, it offers efficient power switching. The logic level gate ensures compatibility with lower voltage control signals. Key parameters include a gate charge (Qg) of 24nC and input capacitance (Ciss) of 1585pF. Presented in a 12-Power3.3x5 (12-PowerWDFN) package for surface mounting, this device supports a maximum power dissipation of 1W and operates across a wide temperature range from -55°C to 150°C. The FDMD82100L is commonly utilized in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1585pF @ 50V |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 12-Power3.3x5 |
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