FDMC8200S
MOSFET 2N-CH 30V 6A/8.5A 8PWR33Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi FDMC8200S is a dual N-channel PowerTrench® MOSFET array designed for high-efficiency power management applications. This 30V device features a low Rds(on) of 20mOhm at 6A and 10V, with continuous drain current capabilities of 6A and 8.5A at 25°C. The FDMC8200S is engineered with a logic level gate for enhanced drive flexibility, and its minimal gate charge of 10nC at 10V and input capacitance of 660pF at 15V contribute to efficient switching performance. Power dissipation is managed with maximum ratings of 700mW and 1W. The component is housed in an 8-Power33 (3x3) surface mount package, supplied on tape and reel, and operates across a temperature range of -55°C to 150°C. This MOSFET array finds application in various industries, including consumer electronics, telecommunications, and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW, 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 8.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-Power33 (3x3) |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDV305N
MOSFET N-CH 20V 900MA SOT23
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
