FDMB3900AN
MOSFET 2N-CH 25V 7A 8MLP MICROManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDMB3900AN is a PowerTrench® series dual N-channel MOSFET array designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 25V and supports a continuous drain current (Id) of 7A at 25°C. With a low on-resistance (Rds On) of 23mOhm at 7A and 10V, and a logic-level gate, it optimizes power efficiency. The MOSFET array is housed in an 8-MLP, MicroFET (3x1.9) package, facilitating high-density surface mount designs with a maximum power dissipation of 800mW. Key parameters include a gate charge (Qg) of 17nC (max) at 10V and input capacitance (Ciss) of 890pF (max) at 13V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics, computing, and industrial power management. The FDMB3900AN is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 13V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) |
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