FDMA3027PZ
MOSFET 2P-CH 30V 3.3A 6MICROFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDMA3027PZ is a dual P-channel MOSFET array designed for high-efficiency power management applications. This MOSFET array features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.3A at 25°C. The device offers a low Rds(on) of 87mOhm maximum at 3.3A and 10V, contributing to reduced conduction losses. With a logic-level gate feature and a maximum gate charge (Qg) of 10nC, it facilitates efficient switching. The 6-MicroFET (2x2) package, a 6-VDFN exposed pad, is suitable for surface mounting and offers a maximum power dissipation of 700mW. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 15V |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 3.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
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