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FDMA1028NZ-F021

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FDMA1028NZ-F021

MOSFET 2N-CH 20V 3.7A 6MICROFET

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

onsemi FDMA1028NZ-F021, a dual N-Channel MOSFET array from the PowerTrench® series, offers a 20V drain-source voltage and a continuous drain current of 3.7A at 25°C. This component features a logic level gate, with a Vgs(th) max of 1.5V at 250µA and a gate charge Qg of 6nC at 4.5V. The Rds On is specified at a maximum of 68mOhm at 3.7A, 4.5V, and its input capacitance Ciss is 340pF at 10V. Packaged in a 6-MicroFET (2x2) with an exposed pad within a 6-VDFN case, the FDMA1028NZ-F021 is designed for surface mounting and supports a maximum power dissipation of 700mW. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in tape and reel packaging. This MOSFET array is suitable for applications in consumer electronics and industrial power management.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-VDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max700mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.7A
Input Capacitance (Ciss) (Max) @ Vds340pF @ 10V
Rds On (Max) @ Id, Vgs68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-MicroFET (2x2)

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