FDMA1027P
MOSFET 2P-CH 20V 3A 6MICROFETManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi's FDMA1027P is a PowerTrench® MOSFET array featuring two P-channel transistors in a 6-MicroFET (2x2) package. This device offers a 20V drain-to-source voltage rating and a continuous drain current capability of 3A at 25°C. The MOSFETs are designed with a logic level gate, supporting efficient switching with a Vgs(th) of 1.3V at 250µA. Key electrical parameters include a maximum Rds On of 120mOhm at 3A and 4.5V, a gate charge of 6nC at 4.5V, and an input capacitance of 435pF at 10V. With a maximum power dissipation of 800mW, this surface mount component operates across a temperature range of -55°C to 150°C. It is supplied in tape and reel packaging and finds application in consumer electronics and power management solutions.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | 6-MicroFET (2x2) |
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