FDJ1032C
MOSFET N/P-CH 20V 3.2A SC75-6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi FDJ1032C is a PowerTrench® MOSFET array featuring N-channel and P-channel configurations. This component offers a 20V drain-to-source voltage (Vdss) and continuous drain current (Id) ratings of 3.2A for the N-channel and 2.8A for the P-channel, both at 25°C. With a low gate charge (Qg) of 3nC at 4.5V and input capacitance (Ciss) of 200pF at 10V, it is designed for efficient switching. The device boasts a maximum on-resistance (Rds On) of 90mOhm at 3.2A and 4.5V, and a maximum power dissipation of 900mW. Its logic level gate feature allows for direct interface with lower voltage control signals. Packaged in an SC-75-6 FLMP for surface mounting, this MOSFET array is suitable for applications in consumer electronics and power management. Operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75-6 FLMP |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A, 2.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC75-6 FLMP |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
