FDG8842CZ
MOSFET N/P-CH 30V 0.75A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG8842CZ is a PowerTrench® MOSFET array featuring N-channel and P-channel configurations. This device offers a 30V drain-to-source voltage for the N-channel and 25V for the P-channel. Continuous drain current capabilities are 750mA for the N-channel and 410mA for the P-channel, both specified at 25°C. With a maximum power dissipation of 300mW, it is designed for surface mounting in the SC-88 (SC-70-6) package, supplied on tape and reel. Key electrical characteristics include a maximum Rds On of 400mOhm at 750mA and 4.5V for the N-channel, a gate charge of 1.44nC at 4.5V, and input capacitance of 120pF at 10V. The logic-level gate feature and a threshold voltage of 1.5V at 250µA make it suitable for low-voltage switching applications, often found in consumer electronics and portable devices.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 30V, 25V |
| Current - Continuous Drain (Id) @ 25°C | 750mA, 410mA |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 750mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.44nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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