FDG6332C-PG
MOSFET N/P-CH 20V 0.7A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6332C-PG is a complementary N-channel and P-channel MOSFET array from the PowerTrench® series. This device features a 20V drain-source voltage rating and offers continuous drain currents of 700mA for the N-channel and 600mA for the P-channel, both measured at 25°C ambient temperature. With a maximum power dissipation of 300mW at 25°C, it is supplied in a compact SC-88/SC70-6/SOT-363 package suitable for surface mounting. Key electrical characteristics include a maximum Rds(On) of 300mOhm at 700mA, 4.5V for the N-channel and 420mOhm at 600mA, 4.5V for the P-channel. Gate charge (Qg) is specified at 1.5nC for the N-channel and 2nC for the P-channel, both at 4.5V Vgs. Input capacitance (Ciss) is a maximum of 113pF for the N-channel and 114pF for the P-channel, both measured at 10V Vds. This component is designed for operation across a wide temperature range of -55°C to 150°C. The onsemi FDG6332C-PG finds application in portable electronics and power management circuits. It is provided in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel Complementary |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta), 600mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V, 114pF @ 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V, 2nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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