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FDG6332C-F085P

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FDG6332C-F085P

MOSFET N/P-CH 20V 0.7A SC70-6

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

onsemi FDG6332C-F085P, a MOSFET array featuring both N-channel and P-channel transistors in a 6-TSSOP, SC-88, SOT-363 (SC-70-6) package. This AEC-Q101 qualified component offers a 20V drain-to-source voltage (Vdss) and continuous drain currents of 700mA for the N-channel and 600mA for the P-channel at 25°C. The N-channel MOSFET exhibits a maximum Rds(On) of 300mOhm at 700mA and 4.5V Vgs, while the P-channel shows 420mOhm at 600mA and 4.5V Vgs. Key parameters include input capacitance (Ciss) of 113pF (N-ch) and 114pF (P-ch) at 10V Vds, and gate charge (Qg) of 1.5nC (N-ch) and 2nC (P-ch) at 4.5V Vgs. The device supports a maximum power dissipation of 300mW and operates across a temperature range of -55°C to 150°C. This component is suitable for automotive applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max300mW (Ta)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C700mA (Ta), 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds113pF @ 10V, 114pF @ 10V
Rds On (Max) @ Id, Vgs300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V, 2nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-70-6
GradeAutomotive
QualificationAEC-Q101

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