FDG6332C-F085P
MOSFET N/P-CH 20V 0.7A SC70-6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDG6332C-F085P, a MOSFET array featuring both N-channel and P-channel transistors in a 6-TSSOP, SC-88, SOT-363 (SC-70-6) package. This AEC-Q101 qualified component offers a 20V drain-to-source voltage (Vdss) and continuous drain currents of 700mA for the N-channel and 600mA for the P-channel at 25°C. The N-channel MOSFET exhibits a maximum Rds(On) of 300mOhm at 700mA and 4.5V Vgs, while the P-channel shows 420mOhm at 600mA and 4.5V Vgs. Key parameters include input capacitance (Ciss) of 113pF (N-ch) and 114pF (P-ch) at 10V Vds, and gate charge (Qg) of 1.5nC (N-ch) and 2nC (P-ch) at 4.5V Vgs. The device supports a maximum power dissipation of 300mW and operates across a temperature range of -55°C to 150°C. This component is suitable for automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta), 600mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V, 114pF @ 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V, 2nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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