FDG6332C-F085
MOSFET N/P-CH 20V 0.7A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6332C-F085 is a PowerTrench® MOSFET array featuring complementary N-channel and P-channel devices. This AEC-Q101 qualified component offers 20V drain-to-source voltage with continuous drain currents of 700mA for the N-channel and 600mA for the P-channel, both specified at 25°C. The MOSFETs boast a low Rds(On) of 300mOhm at 700mA and 4.5V Vgs, alongside a logic-level gate feature. With a maximum power dissipation of 300mW and a maximum gate charge of 1.5nC at 4.5V Vgs, this component is suitable for automotive applications. The device is supplied in a 6-TSSOP, SC-88 (SC-70-6) package on tape and reel, operating across a temperature range of -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 700mA, 600mA |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 700mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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