FDG6332C
MOSFET N/P-CH 20V 0.7A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6332C is a PowerTrench® MOSFET array offering N-channel and P-channel configurations within a compact SC-88 (SC-70-6) package. This device features a 20V Drain-Source voltage rating and supports continuous drain currents of 700mA for the N-channel and 600mA for the P-channel at 25°C. The MOSFET array is designed with logic-level gate drive capability, simplifying interfacing with low-voltage control signals. With a maximum power dissipation of 300mW and a low on-resistance of 300mOhm at 700mA and 4.5V Vgs, it is suitable for various power management applications. Key electrical parameters include a gate charge of 1.5nC at 4.5V and input capacitance of 113pF at 10V. The FDG6332C operates across a wide temperature range of -55°C to 150°C. This component finds application in consumer electronics and portable devices. It is supplied on tape and reel.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 700mA, 600mA |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 700mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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