FDG6321C-F169
MOSFET N/P-CH 25V 0.5A SC70-6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDG6321C-F169: A dual MOSFET array featuring complementary N-channel and P-channel transistors, this device offers a 25V drain-source voltage rating. Each channel is designed for efficient switching, with the N-channel exhibiting a maximum Rds(on) of 450mOhm at 500mA/4.5V, and the P-channel at 1.1 Ohm at 410mA/4.5V. The device supports logic-level gate drive, with a maximum gate charge of 2.3nC for the N-channel and 1.5nC for the P-channel, both specified at 4.5V Vgs. Input capacitance (Ciss) is a maximum of 50pF for the N-channel and 62pF for the P-channel, measured at 10V Vds. This surface-mount component, housed in an SC-70-6 package, dissipates a maximum power of 300mW and operates across a temperature range of -55°C to 150°C. Applications include power management and signal switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta), 410mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V, 62pF @ 10V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V, 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
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