FDG6320C
MOSFET N/P-CH 25V 0.22A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6320C is a dual MOSFET array featuring complementary N-channel and P-channel configurations. This device operates with a drain-source voltage (Vdss) of 25V and offers continuous drain currents of 220mA for the N-channel and 140mA for the P-channel, respectively. Designed for surface mounting in the compact SC-88 (SC-70-6) package, it dissipates a maximum power of 300mW. Key parameters include a logic level gate, with a gate threshold voltage (Vgs(th)) of 1.5V at 250µA and a gate charge (Qg) of 0.4nC at 4.5V. The on-resistance (Rds On) is a maximum of 4 Ohms at 220mA and 4.5V. This component is suitable for applications in consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 220mA, 140mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 220mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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