FDG6318PZ
MOSFET 2P-CH 20V 0.5A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6318PZ is a dual P-channel MOSFET array designed for surface mount applications. This component offers a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 500mA per channel at 25°C. Featuring a logic-level gate, it exhibits a maximum On-Resistance (Rds On) of 780mOhm at 500mA and 4.5V. The device has a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C. Key electrical parameters include a Gate Charge (Qg) of 1.62nC at 4.5V and an Input Capacitance (Ciss) of 85.4pF at 10V. The FDG6318PZ is supplied in an SC-88 (SC-70-6) package, delivered on tape and reel. This MOSFET array is utilized in portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 85.4pF @ 10V |
| Rds On (Max) @ Id, Vgs | 780mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.62nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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