FDG6318P
MOSFET 2P-CH 20V 0.5A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6318P is a dual P-channel MOSFET array designed for efficient power management in applications such as battery charging, portable electronics, and power switching. This device features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 500mA per channel at 25°C. The MOSFET array is configured as two P-channel transistors, offering a low on-resistance of 780mOhm maximum at 500mA and 4.5V Vgs. With a logic level gate feature, it is suitable for direct control by microcontrollers. The FDG6318P is housed in a compact SC-88 (SC-70-6) surface-mount package and operates across a temperature range of -55°C to 150°C. Key parameters include a maximum gate charge of 1.2nC at 4.5V and an input capacitance of 83pF maximum at 10V. The device dissipates a maximum power of 300mW.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
| Rds On (Max) @ Id, Vgs | 780mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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