FDG6317NZ
MOSFET 2N-CH 20V 0.7A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6317NZ is a dual N-channel MOSFET array from the PowerTrench® series. This device offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 700mA at 25°C. Featuring logic level gate operation, it presents a maximum on-resistance (Rds On) of 400mOhm at 700mA and 4.5V. The device's low gate charge (Qg) of 1.1nC at 4.5V contributes to efficient switching. With a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C, it is suitable for applications in consumer electronics and portable devices. The FDG6317NZ is supplied in a 6-TSSOP, SC-88 (SC-70-6) package, mounted via surface mount, and delivered on tape and reel.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 700mA |
| Input Capacitance (Ciss) (Max) @ Vds | 66.5pF @ 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 700mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |