FDG6316P
MOSFET 2P-CH 12V 0.7A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDG6316P, a PowerTrench® series MOSFET array, features two P-Channel devices in a 6-TSSOP, SC-88 (SC-70-6) package. This surface mount component offers a Drain to Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 700mA at 25°C. The device exhibits a low On-Resistance (Rds On) of 270mOhm maximum at 700mA, 4.5V Vgs, and a maximum power dissipation of 300mW. Key characteristics include a logic level gate, Gate Charge (Qg) of 2.4nC at 4.5V, and Input Capacitance (Ciss) of 146pF at 6V. Operating temperature ranges from -55°C to 150°C. This component is utilized in applications such as battery management and power switching within consumer electronics and industrial control systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 700mA |
| Input Capacitance (Ciss) (Max) @ Vds | 146pF @ 6V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 700mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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