FDG6308P
MOSFET 2P-CH 20V 600MA SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDG6308P is a dual P-channel MOSFET array designed for efficient power switching applications. This SC-88 packaged component offers a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 600mA at 25°C. Featuring a logic level gate, it is suitable for low-voltage control circuitry. With a maximum power dissipation of 300mW and a low on-resistance of 400mOhm at 600mA and 4.5V Vgs, the FDG6308P minimizes conduction losses. Key parameters include a gate charge (Qg) of 2.5nC at 4.5V and an input capacitance (Ciss) of 153pF at 10V. This device is ideal for use in portable electronics, battery management, and general-purpose switching. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 600mA |
| Input Capacitance (Ciss) (Max) @ Vds | 153pF @ 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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