FDG6306P
MOSFET 2P-CH 20V 0.6A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDG6306P is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 600mA at 25°C. With a maximum power dissipation of 300mW and an Rds(On) of 420mOhm at 600mA and 4.5V Vgs, it offers optimized performance for its package size. The logic level gate feature ensures compatibility with lower voltage control signals. Key electrical parameters include a gate charge (Qg) of 2nC (max) at 4.5V and an input capacitance (Ciss) of 114pF (max) at 10V. Mounted in a compact SC-88 (SC-70-6) package, this MOSFET array is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This device is commonly utilized in portable electronics and battery management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 600mA |
| Input Capacitance (Ciss) (Max) @ Vds | 114pF @ 10V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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