FDG6304P-F169
MOSFET 2P-CH 25V 0.41A SC70-6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDG6304P-F169 is a dual P-channel MOSFET array designed for surface mount applications. This component features a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 410mA at 25°C (Ta). The MOSFET technology offers a low on-resistance (Rds On) of 1.1 Ohm maximum at 410mA and 4.5V, with a maximum power dissipation of 300mW. Key parameters include a gate charge (Qg) of 1.5nC at 4.5V and an input capacitance (Ciss) of 62pF at 10V. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied in a SC-70-6 package. This MOSFET array is suitable for use in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 410mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 410mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
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