FDG6303N
MOSFET 2N-CH 25V 500MA SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDG6303N is a 2 N-Channel MOSFET array in a 6-TSSOP, SC-88 (SC-70-6) surface mount package. This device features a 25V drain-to-source voltage (Vdss) and a continuous drain current of 500mA at 25°C. The on-resistance (Rds On) is specified at a maximum of 450mOhm at 500mA and 4.5V, with a logic level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 2.3nC (max) at 4.5V and an input capacitance (Ciss) of 50pF (max) at 10V. The device operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 500mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
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