FDG6301N-F085P
MOSFET 2N-CH 25V 0.22A SC70-6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDG6301N-F085P is a dual N-channel MOSFET in a SC-70-6 package. This AEC-Q101 qualified device features a 25V drain-to-source voltage and a continuous drain current of 220mA at 25°C. With a maximum power dissipation of 300mW and a low gate charge of 0.4nC at 4.5V, it is suitable for applications requiring efficient switching. The logic level gate ensures compatibility with lower voltage control signals. The on-resistance is rated at 4 Ohms maximum at 220mA drain current and 4.5V gate-source voltage. This component is commonly utilized in automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 220mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 220mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70-6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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