FDG6301N-F085
MOSFET 2N-CH 25V 0.22A SC88Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi FDG6301N-F085 is a dual N-channel MOSFET array designed for high-density applications. This AEC-Q101 qualified component features a 25V drain-source voltage rating and a continuous drain current capability of 220mA per channel at 25°C. With a low Rds On of 4 Ohms at 220mA and 4.5V Vgs, it minimizes conduction losses. The logic level gate enhancement simplifies drive circuitry. The device is housed in a compact 6-TSSOP, SC-88 (SC-70-6) package suitable for surface mounting. Key parameters include a maximum power dissipation of 300mW, input capacitance of 9.5pF at 10V, and gate charge of 0.4nC at 4.5V. This MOSFET array is typically employed in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 220mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 220mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-88 (SC-70-6) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
NVMFD5C446NWFT1G
MOSFET 2N-CH 40V 24A/127A 8DFN
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NVMJD5D4N04CTWG
MOSFET N-CH 40V LFPAK56
