FDD8426H
MOSFET N/P-CH 40V 12A/10A TO252Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi's FDD8426H is a PowerTrench® MOSFET array featuring complementary N-channel and P-channel devices. This surface-mount component, housed in a TO-252 (DPAK) package, boasts a 40V drain-to-source voltage rating. The N-channel MOSFET offers a continuous drain current of 12A and a low on-resistance of 12mOhm at 12A, 10V, while the P-channel MOSFET supports 10A with comparable on-resistance characteristics. Key parameters include a gate charge (Qg) of 53nC (max) at 10V and input capacitance (Ciss) of 2735pF (max) at 20V. This device operates across a temperature range of -55°C to 150°C and is suitable for applications requiring efficient power switching and management, commonly found in consumer electronics and industrial power control systems. The FDD8426H utilizes MOSFET technology and is supplied on tape and reel.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 12A, 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 2735pF @ 20V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
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