FDD8424H
MOSFET N/P-CH 40V 9A/6.5A TO252Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi PowerTrench® FDD8424H is a complementary N-channel and P-channel MOSFET array designed for efficient power switching applications. This device offers a 40V drain-source breakdown voltage with continuous drain currents of 9A for the N-channel and 6.5A for the P-channel, both at 25°C. Key features include a low Rds(on) of 24mOhm at 9A/10V for the N-channel, facilitating minimal conduction losses. The MOSFET array utilizes a logic-level gate drive, simplifying interface requirements with microcontrollers. With a maximum power dissipation of 1.3W and packaged in a surface-mount TO-252 (DPAK) configuration, the FDD8424H is suitable for high-density power management solutions in industries such as consumer electronics and industrial automation. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 20V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
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