FDD3510H
MOSFET N/P-CH 80V 4.3A TO252Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi PowerTrench® MOSFET N/P-CH FDD3510H is an array featuring N-channel and P-channel MOSFETs in a common drain configuration. This surface mount device, packaged in a TO-252 (DPAK), offers a Drain to Source Voltage (Vdss) of 80V. The continuous drain current (Id) is rated at 4.3A for the N-channel and 2.8A for the P-channel, with a maximum power dissipation of 1.3W. Its Rds On is specified at 80mOhm at 4.3A, 10V, and it includes logic level gate functionality. Key parameters include a gate charge (Qg) of 18nC at 10V and input capacitance (Ciss) of 800pF at 40V. The operating temperature range is -55°C to 150°C (TJ). This component finds application in automotive and industrial power management systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel, Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.3W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A, 2.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 40V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 4.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
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