FDC6561AN-NB5S007A
MOSFET 2N-CH 30V 2.5A SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDC6561AN-NB5S007A is a dual N-channel MOSFET array designed for demanding applications. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C. Featuring a logic level gate, it is optimized for efficient switching with a low gate charge (Qg) of 3.2nC at 5V and a low input capacitance (Ciss) of 220pF at 15V. The device boasts a low on-resistance (Rds On) of 95mOhm maximum at 2.5A and 10V, with a maximum power dissipation of 700mW. Housed in a SuperSOT™-6 package, this surface-mount device operates across a temperature range of -55°C to 150°C. It is commonly utilized in power management, battery charging, and control circuitry within the consumer electronics and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
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