FDC6506P
MOSFET 2P-CH 30V 1.8A SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDC6506P is a dual P-channel MOSFET array from the PowerTrench® series, packaged in a SuperSOT™-6 (SOT-23-6 Thin) for surface mounting. This device offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.8A at 25°C. Featuring a logic level gate, it is designed for efficient switching applications, with a maximum Rds(On) of 170mOhm at 1.8A and 10V. The FDC6506P has a maximum power dissipation of 700mW and an operating temperature range of -55°C to 150°C. Its low gate charge (Qg) of 3.5nC at 10V and input capacitance (Ciss) of 190pF at 15V make it suitable for battery management, load switching, and power supply circuits across various electronic systems. This component is supplied on tape and reel.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
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