FDC6432SH
MOSFET N/P-CH 30V/12V 2.4A SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDC6432SH is a dual N-channel and P-channel MOSFET array, part of the PowerTrench® and SyncFET™ series. This component features 30V drain-to-source voltage for the N-channel and 12V for the P-channel, with continuous drain currents of 2.4A and 2.5A respectively. The SuperSOT™-6 package provides a compact surface mount solution suitable for power management applications in consumer electronics and industrial automation. Key parameters include a maximum power dissipation of 700mW, 90mOhm maximum Rds(on) at 2.4A and 10V, and a logic-level gate feature. Gate charge is specified at 3.5nC maximum at 5V, with input capacitance at 270pF maximum at 15V. The operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®, SyncFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 30V, 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | SuperSOT™-6 |
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