FDC6333C-G
MOSFET N/P-CH 30V 2.5A/2A SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi FDC6333C-G is a PowerTrench® MOSFET array featuring complementary N-channel and P-channel transistors in a single SuperSOT™-6 package. This device offers a 30V drain-source breakdown voltage. The N-channel transistor provides a continuous drain current of 2.5A at 25°C with a maximum on-resistance of 95mOhm at 2.5A, 10V, and a gate charge of 6.6nC at 10V. The P-channel transistor supports a continuous drain current of 2A at 25°C with a maximum on-resistance of 130mOhm at 2A, 10V, and a gate charge of 5.7nC at 10V. Both channels exhibit input capacitance (Ciss) of 282pF and 185pF respectively at 15V. With a maximum power dissipation of 700mW, it is suitable for applications requiring efficient power switching and is commonly found in consumer electronics and industrial control systems. The component operates across a temperature range of -55°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta), 2A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 282pF @ 15V, 185pF @ 15V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V, 5.7nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
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