FDC6322C
MOSFET N/P-CH 25V 0.22A SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDC6322C is a high-performance MOSFET array featuring complementary N-channel and P-channel transistors. This component, housed in a SuperSOT™-6 package, offers a drain-source voltage (Vdss) of 25V. It is designed for efficient switching with continuous drain currents of 220mA for the N-channel and 460mA for the P-channel, both specified at 25°C. The device boasts a low Rds On of 4 Ohms at 400mA and 4.5V Vgs, and a logic level gate for compatibility with lower voltage control signals. Key parameters include a maximum power dissipation of 700mW, a gate charge (Qg) of 0.7nC at 4.5V, and an input capacitance (Ciss) of 9.5pF at 10V. The FDC6322C is suitable for applications in consumer electronics and industrial control systems. It operates across a wide temperature range from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 220mA, 460mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
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