FDC6304P
MOSFET 2P-CH 25V 460MA SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDC6304P is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 460mA at 25°C, with a maximum on-resistance (Rds On) of 1.1 Ohm at 500mA and 4.5V Vgs. Its logic level gate capability allows for direct interfacing with low-voltage control signals. The FDC6304P has a maximum power dissipation of 700mW and an operating temperature range of -55°C to 150°C. Packaged in the compact SuperSOT™-6 (SOT-23-6 Thin, TSOT-23-6) and supplied on tape and reel, this MOSFET array is suitable for use in portable electronics, battery management systems, and other space-constrained designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 460mA |
| Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 10V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 500mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
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