FDC6302P
MOSFET 2P-CH 25V 0.120A SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDC6302P is a 2 P-channel MOSFET array designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 120mA at 25°C. The MOSFET array offers a low Rds On of 10 Ohms maximum at 200mA, 4.5V, and a gate charge (Qg) of 0.31nC maximum at 4.5V, ensuring low conduction and switching losses. With a logic level gate, it is suitable for direct interface with low-voltage microcontrollers. The component is packaged in a SuperSOT™-6 (SOT-23-6 Thin) and supplied on tape and reel. Key parameters include an input capacitance (Ciss) of 11pF maximum at 10V and a maximum power dissipation of 700mW. This MOSFET array finds application in portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 120mA |
| Input Capacitance (Ciss) (Max) @ Vds | 11pF @ 10V |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.31nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |