FDC6036P
MOSFET 2P-CH 20V 5A SSOT6Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi's FDC6036P is a PowerTrench® series MOSFET featuring a 2 P-Channel configuration in a 6-SSOT Flat-lead, SuperSOT™-6 FLMP package. This device offers a continuous drain current of 5A at 25°C and a drain-to-source voltage (Vdss) of 20V. Key electrical characteristics include a maximum on-resistance (Rds On) of 44mOhm at 5A, 4.5V, and a gate charge (Qg) of 14nC maximum at 4.5V. The MOSFET is designed with a logic level gate and has an input capacitance (Ciss) of 992pF maximum at 10V. With a maximum power dissipation of 900mW, it operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in automotive and industrial applications.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 992pF @ 10V |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
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