FDC6000NZ
MOSFET 2N-CH 20V 7.3A 6SSOTManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FDC6000NZ is a PowerTrench® series 2 N-channel MOSFET array designed for high-efficiency power management applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 7.3A at 25°C. Optimized for low gate charge, the FDC6000NZ exhibits a maximum gate charge (Qg) of 11nC at 4.5V and a low on-resistance (Rds On) of 20mOhm at 6.5A and 4.5V, indicative of its logic-level gate drive compatibility. With a maximum power dissipation of 1.2W, it is housed in a 6-SSOT Flat-lead, SuperSOT™-6 FLMP package, suitable for surface mounting. The operating temperature range is from -55°C to 150°C (TJ). This component is frequently utilized in consumer electronics, industrial automation, and computing systems where compact, high-performance power switching is critical.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 FLMP |