FD6M016N03
MOSFET 2N-CH 30V 80A EPM15Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi FD6M016N03 is a 2-N-channel MOSFET array within the Power-SPM™ series, presented in an EPM15 through-hole package. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id @ 25°C) of 80A. The on-resistance (Rds On) is specified at a maximum of 1.6mOhm at 40A and 10V. Key characteristics include a gate charge (Qg) of 295nC (max) at 10V and input capacitance (Ciss) of 11535pF (max) at 15V. The threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. This device is suitable for applications in power management and motor control systems, operating within a temperature range of -40°C to 150°C (TJ). It is supplied in Tube packaging.
Additional Information
Series: Power-SPM™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | EPM15 |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A |
| Input Capacitance (Ciss) (Max) @ Vds | 11535pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 40A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 295nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | EPM15 |
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