EMH2411R-TL-H
MOSFET 2N-CH 30V 5A 8EMHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EMH2411R-TL-H is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. With a low Rds(On) of 36.5mOhm at 2.5A and 4.5V, it minimizes conduction losses. The logic-level gate drive capability, requiring only 2.5V for activation, simplifies interfacing with microcontroller outputs. The EMH2411R-TL-H is housed in an 8-EMH package, suitable for surface mounting. Its 1.4W maximum power dissipation and 150°C operating temperature rating make it robust for demanding environments. This MOSFET array is commonly utilized in automotive, industrial automation, and power management systems. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 36.5mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.9nC @ 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-EMH |
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