EMH2409-TL-H
MOSFET 2N-CH 30V 4A 8EMHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EMH2409-TL-H is a 2 N-Channel MOSFET array featuring a 30V drain-source voltage capability and a continuous drain current of 4A at 25°C. This device utilizes MOSFET technology and is packaged in an 8-EMH surface mount configuration, supplied on tape and reel. Key electrical characteristics include a maximum on-resistance of 59mOhm at 2A and 10V, and a gate charge of 4.4nC at 10V. The input capacitance (Ciss) is a maximum of 240pF at 10V. Designed for logic-level gate operation, it has a maximum power dissipation of 1.2W and an operating temperature range up to 150°C. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-EMH |
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