EMH2314-TL-H
MOSFET 2P-CH 12V 5A 8EMHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi EMH2314-TL-H is a dual P-channel MOSFET array designed for efficient power switching. This device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 5A at 25°C. The low on-resistance of 37mOhm at 2.5A and 4.5V gate-source voltage (Vgs) contributes to minimal power dissipation, supporting a maximum power rating of 1.2W. The logic-level gate enhances compatibility with low-voltage control signals. With a gate charge (Qg) of 12nC (max) at 4.5V and input capacitance (Ciss) of 1300pF (max) at 6V, this MOSFET array is suitable for applications requiring fast switching characteristics. It is packaged in an 8-EMH (8-SMD, Flat Leads) format for surface mounting and operates within a temperature range of 150°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 6V |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-EMH |
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