EMH2308-TL-H
MOSFET 2P-CH 20V 3A 8EMHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EMH2308-TL-H is a dual P-channel Power MOSFET array packaged in an 8-EMH (8-SMD, Flat Leads) configuration. This device offers a continuous drain current (Id) of 3A at 25°C and a drain-to-source voltage rating (Vdss) of 20V. Designed with a logic level gate, it supports 1.8V drive, featuring a typical gate charge (Qg) of 4nC at 4.5V and input capacitance (Ciss) of 320pF at 10V. The on-resistance (Rds On) is specified at a maximum of 85mOhm at 3A and 4.5V. This MOSFET array is rated for a maximum power dissipation of 1W and operates within an ambient temperature range up to 150°C (TJ). Supplied in a Tape & Reel (TR) package, the EMH2308-TL-H is suitable for applications in automotive, industrial automation, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-EMH |
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