EMH2308-TL-E
MOSFET 2P-CH 20V 3A 8EMHManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi EMH2308-TL-E is a dual P-channel MOSFET array designed for surface mount applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 3A at 25°C. The EMH2308-TL-E utilizes Metal Oxide technology and is specified with a maximum power dissipation of 1.2W. Key electrical characteristics include a low on-resistance of 85mOhm maximum at 3A and 4.5V Vgs, along with a gate charge of 4nC maximum at 4.5V. Input capacitance (Ciss) is 320pF maximum at 10V. This component is commonly employed in power management solutions across various industries, including consumer electronics and industrial automation. The device is supplied in an 8-EMH package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-EMH |
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