EFC6612R-TF
MOSFET 2N-CH 20V 23A 6CSPManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi EFC6612R-TF is a 2-channel MOSFET array designed for high-efficiency power switching applications. This component features a 2 N-channel configuration with a common drain, optimized for compact designs. The MOSFET technology provides a logic-level gate, enabling operation with a 2.5V drive voltage. Key electrical characteristics include a maximum power dissipation of 2.5W and a gate charge of 27nC at 4.5V Vgs. The component is housed in a 6-CSP (1.77x3.54) package, suitable for surface mounting. Its operating temperature range extends to 150°C (TJ). This device is commonly utilized in automotive, industrial, and consumer electronics sectors where space-constrained power management is critical. The EFC6612R-TF is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-CSP (1.77x3.54) |
Request a Quote
Clients Also Buy
NVMFD5C446NWFT1G
MOSFET 2N-CH 40V 24A/127A 8DFN
NVMJD5D4N04CTWG
MOSFET N-CH 40V LFPAK56
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
